Home /Archive /2015 /2015 №2 /2015_2_7

Visn. Nac. Akad. Nauk Ukr. 2015. (2): 37-43.
​https://doi.org/10.15407/visn2015.02.037

A.E. Belyaev, V.A. Kochelap
Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, Kyiv

FASCINATED JOURNEYS INTO BLUE LIGHT

Abstract:
Nobel Prize in Physics 2014 was awarded to Isamu Akasaki, Hiroshi Amano, and Shuji Nakamura for the development of the blue optical diodes, which allowed the introduction of bright and energy-saving light sources.
Keywords: blue optical diodes, Nobel Prize, I. Akasaki, H. Amano, S. Nakamura.

 

Language of article: ukrainian.

References:

  1. Lashkarev V.Ye. Bulletin of the Russian Academy of Sciences: Physics. 1941. 5(4–5): 442.
  2. Jezowski A., Danilchenko B., Bockowski M., Grzegory I., Krukowski S., Suski T. Thermal conductivity of GaN crystals in 4.2–300 K range. Solid State Commun. 2003. 128(2): 69. http://doi.org/10.1016/S0038-1098(03)00629-X
  3. Danilchenko B.A., Paszkiewicz T., Wolski S., Jeżowski A., Plackowski T. Heat capacity and phonon mean free path of wurzite GaN. Appl. Phys. Lett. 2006. 89: 061901. http://doi.org/10.1063/1.2335373
  4. Sukach G.A., Smertenko P.S., Oleksenko P.F., Nakamura S. Analysis of the active region of overheating temperature in green LEDs based on Group III nitrides. Technical Physics. 2001. 46(4): 438. http://doi.org/10.1134/1.1365468
  5. Sukach G.A., Smertenko P.S., Oleksenko P.F., Nakamura S. Svetodiody i lazery. 2002. (1–2): 45.
  6. Vitusevich S.A., Danylyuk S.V., Klein N., Petrychuk M.V., Kochelap V.A., Belyaev A.E., Tilak V. Separation of hot-electron and self-heating effects in two-dimensional AlGaN/GaN-based conducting channels. Appl. Phys. Lett. 2003. 82(5): 748. http://doi.org/10.1063/1.1542928
  7. Danilchenko B.A., Zelensky S.E., Drok E., Vitusevich S.A., Danylyuk S.V., Klein N., Luth H., Belyaev A.E., Kochelap V.A. Hot-electron transport in AlGaN/GaN two-dimensional conducting channels. Appl. Phys. Lett. 2004. 85(22): 5421. http://doi.org/10.1063/1.1830078
  8. Belyayeva A.Ye., Konakovoy R.V. Physical diagnostic methods in micro- and nanoelectronics. Kharkov: ISMA, 2011.
  9. Komirenko S.M., Kim K.W., Kochelap V.A., Zavada J.M. Enhancement of hole injection for nitride-based light-emitting devices. Solid-State Electronics. 2003. 47: 169. http://doi.org/10.1016/S0038-1101(02)00314-3
  10.  Zavada J.M., Komirenko S.M., Kim K.W., Kochelap V.A. Efficient nitride-based short-wavelength emitters with enhanced hole injection. Institute of Physics: Conference Series. 2003. 174: 401.
  11. Komirenko S.M., Kim K.W., Kochelap V A., Zavada J.M. Laterally doped heterostructures for III–N lasing devices. Appl. Phys. Lett. 2002. 81(24): 4617. http://doi.org/10.1063/1.1527985